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王海龙

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联系方式

通讯地址:山东省曲阜市静轩西路57号

邮政编码:273165

电子邮件:phyhlwang71@126.com

hlwang@mail.qfnu.edu.cn

办公地址:物理楼410

办公电话:0537-5050770

一、个人简历

王海龙,男,1971年5月出生,博士,教授,博士生导师,博士后合作导师,物理工程学院副院长,

曲阜师范大学“1361”人才工程入选人才,曲阜师范大学第八届学术委员会委员,

济宁市物理学会第六届理事会常务理事、副秘书长,济宁市海外联谊会第四届理事会理事。

教育背景:

中国科学院半导体研究所理学博士学位(2000.7)

北京师范大学物理系理学硕士学位(1995.7)

曲阜师范大学物理系学士学位(1992.6)

工作经历:

1995年7月开始在曲阜师范大学物理系工作,历任助教(1995)、讲师(1997)、

副教授(2000)、教授(2006),其间:日本电信电话株式会社(NTT)物性科学基础研究所博士后(2000.9-2002.8)香港理工大学电子及资讯工程系 Research Fellow(2002.9-2003.7)

日本国际电气通信基础技术研究所(ATR) Research Fellow(2003.8-2005.3)

现任职务:

物理工程学院副院长,负责学院的科研、研究生、本科生毕业论文等工作,并协助院长分管学科建设。

二、教学工作

主要从事本科生、研究生基础课和专业课的教学工作,主讲过的课程有热力学与统计物理、固体物理、光电子技术与光纤通信、半导体物理学、光电材料与器件、固体光电性质、现代物理选讲等。主持热力学统计物理校级精品课程建设。

三、研究领域

光通信与量子通信,半导体光电子学,凝聚态光电性质等

四、奖励、荣誉情况

济宁市优秀科技工作者(2013)

山东省研究生优秀科技创新成果三等奖(第二位)(2013)

山东省海外专业人士创新创业成就奖(2011)

山东省优秀硕士学位论文(导师)(2010)

山东省优秀学士学位论文(导师)(2012)

曲阜师范大学优秀共产党员(2011)

曲阜师范大学优秀研究生指导教师(2009, 2011, 2013)

曲阜师范大学研究生教育先进工作者(2008, 2010)

国家级大学生创新创业训练计划项目(指导教师)(2014)

五、科研项目:

[1] 2014.12—2017.11,1.55微米InAs/InGaAsP量子点半导体光放大器材料与器件(ZR2014FM011),经费:18万元,山东省自然科学基金委。(主持)

[2] 2014.1—2015.12,III-V融合材料和稀铋材料中杂质缺陷的研究(SKL201307),经费:10万元,国家重点实验室开放课题。(主持)

[3] 2012.01-2015.12,1.5-1.7微米波段宽调谐InAs/InP量子点外腔激光器的研究(61176065),经费:70万元,国家自然科学基金委。(第二位)

[4] 2010.11—2013.11,InAs/InP量子点外腔激光器(ZR2010FM023),经费:7万元,山东省自然科学基金委。(主持)

[5] 2010.01-2012.12, GSMBE 1.55微米InAs/InGaAsP量子点激光器材料与器件(60976015),经费:40万元,国家自然科学基金委。(主持)

[6] 2006.1-2008.12应力驱动微结构自组装方法的理论及实验研究,经费:2万元,教育部留学回国人员科研启动基金。(主持)

[7]2009.6-2011.5应变自组装方法制作三维半导体微纳米结构的理论与实验研究,经费:10万元,国家重点实验室开放课题。(主持)

六、研究论文与发明专利:

国家发明专利:

1.发明名称:原位测量源炉中源材料质量的方法,发明人:龚谦,王海龙,发明专利号:ZL 2008 1 0035437.3,授权公告日:2010年09月29日

2.发明名称:束源炉中源材料熔化时对应热偶温度的测量方法,发明人:龚谦,王海龙,徐海华,专利号:ZL 2008 1 0035446.2,授权公告日:2010年11月17日

发表研究论文70多篇,主要论文:

1. XuegangZheng, HailongWang, Qian Gong, LichunZhang, Guangliang Cui, QingshanLi, Li Chen, Fuquan Wu, ShuminWang, Highly Luminescent Carbon Nanoparticles as Yellow Emission Conversion Phosphors,Materials Letters, 143, 290-293 (2015).(通讯作者)

2. X. G. Zheng, H. L. Wang, Q. Gong, G. L. Cui, L. Chen, GuqiaoDing, A facile and transfer-free path for template-less synthesis of carbon nanosheets, Materials Letters,143, 233-236 (2015).(通讯作者)

3. LI Shi-Guo, GONG Qian, CAO Chun-Fang, WANG Xin-Zhong, YAN Jin-Yi, WANG Hai-Long, Junction-Temperature Measurement in InAs/InP(100) Quantum-Dot Lasers, Chinese Physics Letters, 32(1), 014208(2015).

4. X.G. Zheng,H.L. Wang, Q. Gong, L. Chen, K. Wang, S.M. Wang, Template-less Synthesis of Hollow Carbon Nanospheres for White Light-Emitting Diodes, Materials Letters, 126, 71-74 (2014).(通讯作者)

5. S. G. Li, Q. Gong, C. F. Cao, X. Z. Wang, J. Y. Yan, Y. Wang, H. L. Wang, A review of external cavity-coupled quantum dot lasers,optical and quantum electronics,46, 623(2014).

6.王文娟,王海龙,龚谦,宋志棠,汪辉,封松林,外电场对InGaAsP/InP量子阱内激子结合能的影响,物理学报,62(23),237104(2013)。(通讯作者)

7.陈茜,王海龙,汪辉,龚谦,宋志棠, Ga1-xInxNyAs1-y/GaAs量子阱中电子-LO声子的散射率,物理学报,62(20),226301(2013)。(通讯作者)

8. S.G. Li, Q. Gong, C.F. Cao, X.Z. Wang, L. Yue, Y. Wang, H.L. Wang, Multi-spectral lasing characteristics of InAs/GaAs quantum dot laser, Superlatticesand Microstructures, 59, 97-105 (2013)

9. S.G. Li, Q. Gong, C.F. Cao, X.Z. Wang, J.Y. Yan, Y. Wang, H.L. Wang, The developments of InP-based quantum dot lasers, Infrared Physics and Technology, 60, 216-224(2013).

10. S. G. Li,Q. Gong, C. F. Cao, X. Z. Wang, and H. L. Wang, Measurements of I-V characteristics in InAs/InP quantum dot laser diode, Journal of Modern Optics, 59(19), 1695-1699 (2012).

11. S. G. Li,Q. Gong, X. Z. Wang, L. Yue, Q. B. Liu, H. L. Wang and C. H. Ma, Morphology and shape dependent characteristics of InAs/InP(100) quantum dot laser grown by gas source molecular beam epitaxy, Physica E, 44(10), 1983-1987(2012).

12. S.G. Li, Q. Gong, C.F. Cao, X.Z. Wang, P. Chen, L. Yue, Q.B. Liu, H.L. Wang, C.H. Ma, Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser, Materials Science in Semiconductor Processing, 15(1), 86-90 (2012).

13. Chuanhe Ma, Hailong Wang, Yan Zhou, Qian Gong, Peng Chen, Chunfang Cao, Song-Lin Feng,Shiguo Li, The I-V characteristics of InAs/GaAs QD laser, Physica B, 406(19),3636-3639(2011).(通讯作者)

14. Zhou Yan,Wang Hai-long, Ma Chuan-he, Gong Qian, FengSong-Lin, Fabrication of strain-driven self-assembly micromirroron a GaAs substrate, Chinese Physics Letters, 28(7):078102(2011).(通讯作者)

15. Q. Gong, P. Chen, S.G. Li, Y.F. Lao, C.F. Cao, C.F. Xu, Y.G. Zhang, S.L. Feng, C.H. Ma, H.L. Wang,Quantum dot lasers grown by gas source molecular-beam epitaxy, Journal of Crystal Growth, 323(1),450-453(2011).

16. P. Chen, Q. Gong, C. F. Cao, S. G. Li, Y. Wang, Q. B. Liu, L. Yue, Y. G. Zhang, and S. L. Feng,C. H. Ma, H. L. Wang, High performance external cavity InAs/InPquantum dot lasers, Applied Physics Letters, 98(12), 121102 (2011).

17. Hailong Wang , Liming Jiang,Qian Gong,Songlin Feng, External electric field effect on the hydrogenic donor impurity in zinc-blendeInGaN/GaN cylindrical quantum well wire, Physica B,405(18), 3818-3821 (2010).

18. S.G. Li, Q. Gong, Y.F. Lao, Y.G. Zhang, S.L. Feng and H.L. Wang, InAs/InP(100) quantum dot laser with high wavelength stability, Electronics Letters,46 (2), 158-159 (2010).

19. S. G. Li, Q. Gong, Y. F. Lao, H. D. Yang, S. Gao, P. Chen, Y. G. Zhang, S. L. Feng, and H.L. Wang, Two-color quantum dot laser with tunable wavelength gap, Applied Physics Letters95, 251111 (2009).

20. Liming JIANG, Hailong WANG , HuitingWU, Qian GONG,Songlin FENG,Electronic states of a shallow hydrogenic donor impurity in different shaped semiconductor quantum wells, Communications in Theoretical Physics, 51(6), 1135-1138 (2009).(通讯作者)

21. Liming JIANG, Hailong WANG , HuitingWU, Qian GONG,Songlin FENG,External electric field effect on the hydrogenicdonor impurity in zinc-blende GaN/AlGaNcylindrical quantum dot,Journal of Applied Physics 105, 053710 (2009)(通讯作者)

22. Huiting WU, Hailong WANG , Liming JIANG, Qian GONG,Song-Lin FENG,The electric field effect on binding energy of hydrogenic impurity in zinc-blendeGaN/AlxGa1-xN spherical quantum dot,Physica B,404(1), 122-126(2009).(通讯作者)

23.吴慧婷,王海龙,姜黎明,有效质量差异和电场对GaN/AlxGa1-xN球形量子点电子结构的影响,物理学报,58(1),465-470(2009).(通讯作者)

24. S.G. Li, Q. Gong, Y.F. Lao, K. He, J. Li, Y.G. Zhang, S.L. Feng, H.L. Wang, Room temperature continuous-wave operation of InAs/InP(100) quantum dot lasers grown by gas-source molecular-beam epitaxy,Applied Physics Letters 93, 111109 (2008).

25. JIANG Li-Ming, WANG Hai-Long ,WU Hui-Ting, GONG Qian,FENG Song-Lin,External electric field effect on the hydrogenicdonor impurity in zinc-blende InGaNquantum dot,Chinese Physics Letters,25(8), 3017-3020(2008).(通信作者)

26.Heng-Jing Tang and Fu-Quan Wu, Hai-Long Wang, Yu-Hua Wei, and Qing-Shan Li, Optical properties of Ag-Al2O3nano-array composite structure, Optik, 119, 134-138 (2008).

27. H. J. Tang , F. Q. Wu, H. L. Wang, Y. H. Wei, and Q. S. Li, Microstructure and optical properties of Cu/Al2O3 nanoarraycomposite structure, Journal of Applied Physics100, 064316 (2006)

28. Tadashi Saitoh, Masami Kumagai,Hailong Wang, TakehikoTawara, Toshio Nishida, (Tetsuya Akasaka), and (Naoki Kobayashi)Highly reflective distributed Bragg reflectors using a deeply etched semiconductor/air grating for InGaN/GaNlaser diodes, Applied Physics Letters,82(25), 4426-4428(2003).

29. Hailong Wang, Masami Kumagai, Takehiko Tawara, Toshio Nishida, Tetsuya Akasaka, Naoki Kobayashi and Tadashi Saitoh, Fabrication of an InGaN multiple-quantum-well laser diode featuring high reflectivity semiconductor/air distributed Bragg reflectors, Applied Physics Letters, 81(25), 4703( 2002).

30. Hailong Wang, Takehiko Tawara, Masami Kumagai, Tadashi Saitoh and Naoki Kobayashi, Novel Design to Fabricate High Reflectivity GaN-based Semiconductor/Air Distributed Bragg Reflector with the Tilt of Vertical Sidewall, Japanese Journal of Applied Physics,41 (6B), Pt.2, L682(2002).

31. Wang Hailong, Feng Songlin,Yang Fuhua, Sun Baoquan and Jiang Desheng, Excitation transfer in vertically self-organized pairs of unequal-sized InAs/GaAs quantum dots,Chinese Physics Letters, 17(8), 615-616 (2000).

32. Jiannong Wang, Baoquan Sun, Xiangrong Wang, Yuqi Wang, Weikun Ge, Desheng Jiang and Hailongwang, Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice, Physica E, 8(2), 141-145, 2000.

33. H. L. Wang, F. H. Yang and S. L. Feng, Photoluminescence in Si and Bedirectly doped self-organized InAs/GaAs quantum dots, Journal of Crystal Growth, 212, 35-38(2000).

34. H.L. Wang, F.H. Yang, S.L. Feng, H.J. Zhu, D. Ning, H. Wang and X. D. Wang, Experimental determination of local Strain effect on InAs/GaAsself-organized quantum dots, Physical Review B., 61(8), 5530-5534(2000).

35. H. L. Wang, D. Ning and S. L. Feng, Temperature dependence of the optical properties of InAs/GaAs self-organized quantum dots with bimodal size distribution, Journal of Crystal Growth, 209, 630-636(2000).

36. Haijun Zhu, Songlin Feng, DeshengJiang, Yuanming Deng and Hailong Wang, Strain Effect on the InAs/GaAs Quantum Dots, Japanese Journal of Applied Physics, 38, Pt.1, 11, 6264-6265, 1999.

37. J.N. Wang, B.Q. Sun, X.R. Wang and H.L. Wang, Negative differential resistance and the transition to current self-oscillation in GaAs/AlAs superlattices, Solid State Communications, 112(7), 371-374(1999).

38. Jiannong Wang, Baoquan Sun, Xiangrong Wang, Yuqi Wang, Weikun Ge and HailongWang, Dynamic dc voltage band observed within each current branch in the transition from static to dynamic electric field domain formation in a doped GaAs/AlAs superlattic,Applied, Physics Letter, 75(17), 2620-2622 (1999).

39. Baoquan Sun, Jiannong Wang, Weikun Ge, Yuqi Wang, Desheng Jiang, Haijun Zhu, HailongWang, Yuanming Deng and SonglinFeng, Current Self-oscillation Induced by Transverse Magnetic Field in a doped GaAs/AlAs Superlattice, Physical Review B, 60(12), 8866-8870(1999).

40. Wang Hailong, Feng Songlin, Zhou Jie and Yang Xizhen, Determination of Capture Barrier of Defects for GaAs Alloys and Transient Photo-resistivity Spectroscopy, ACTA PhysicaSinica (Overseas edition), 5(1), 1-9 (1996).

七、业余爱好

乒乓球,羽毛球,象棋,摄影等